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absolute maximum ratings (per die) parameter n-channel p-channel units i d @ v gs = 12v, t c = 25c continuous drain current 1.6 -0.96 i d @ v gs = 12v, t c = 100c continuous drain current 1.0 -0.6 i dm pulsed drain current 6.4 -3.84 p d @ t c = 25c max. power dissipation 1.4 1.4 w linear derating factor 0.011 0.011 w/c v gs gate-to-source voltage 20 20 v e as single pulse avalanche energy 130 200 mj i ar avalanche current 1.6 -0.96 a e ar repetitive avalanche energy 0.14 0.14 mj dv/dt peak diode recovery dv/dt 6.5 7.1 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.63 in./1.6 mm from case for 10s) weight 1.3 (typical) g pre-irradiation c a radiation hardened power mosfet thru-hole (mo-036ab) www.irf.com 1 product summary part number radiation level r ds(on) i d channel irhg567110 100k rads (si) 0.29 ? 1.6a n irhg563110 300k rads (si) 0.29 ? 1.6a n irhg567110 100k rads (si) 0.96 ? -0.96a p irhg563110 300k rads (si) 0.96 ? -0.96a p features: single event effect (see) hardened low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed ceramic package light weight
mo-036ab irhg567110 100v, combination 2n-2p-channel rad-hard ? hexfet ? international rectifier?s rad-hard tm hexfet ? mosfet technology provides high performance power mosfets for space applications. this technology has over a decade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. technology esd rating: class 1a per mil-std-750, method 1020 pd-94246c
irhg567110 pre-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics (per die) parameter min typ max units test conditions i s continuous source current (body diode) ? ? 1.6 i sm pulse source current (body diode) ? ? 6.4 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 1.6a, v gs = 0v t rr reverse recovery time ? ? 110 ns t j = 25c, i f = 1.6a, di/dt 100a/ s q rr reverse recovery charge ? ? 380 nc v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics for each n-channel device @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 100 ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.14 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.29 v gs = 12v, i d = 1.0a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 1.0 ? sv ds =15v, i ds = 1.0a i dss zero gate voltage drain current ? ? 10 v ds = 80v, v gs = 0v ??25 v ds = 80v, v gs = 0v, t j =125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 17 v gs =12v, i d = 1.6a, q gs gate-to-source charge ? ? 4.4 nc v ds = 50v q gd gate-to-drain (?miller?) charge ? ? 3.9 t d (on) turn-on delay time ? ? 21 v dd = 50v, i d = 1.6a, t r rise time ? ? 16 v gs =12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 30 t f fall time ? ? 15 l s + l d total inductance ? 10 ? measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance ? 370 ? v gs = 0v, v ds = 25v c oss output capacitance ? 110 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 3.4 ? na nh ns a ? ? ? thermal resistance (per die) parameter min typ max units test conditions r thja junction-to-ambient ? ? 90 c/w note: corresponding spice and saber models are available on international rectifier website.
www.irf.com 3 pre-irradiation irhg567110 for footnotes refer to the last page source-drain diode ratings and characteristics (per die) parameter min typ max units test conditions i s continuous source current (body diode) ? ? -0.96 i sm pulse source current (body diode) ? ? -3.84 v sd diode forward voltage ? ? -5.0 v t j = 25c, i s = -0.96a, v gs = 0v t rr reverse recovery time ? ? 86 ns t j = 25c, i f = -0.96a, di/dt -100a/ s q rr reverse recovery charge ? ? 240 nc v dd -25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance (per die) parameter min typ max units test conditions r thja junction-to-ambient ? ? 90 c/w electrical characteristics for each p-channel device @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -100 ? ? v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? -0.14 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.96 v gs = -12v, i d = -0.6a resistance v gs(th) gate threshold voltage -2.0 ? -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 1.1 ? ? s v ds = -15v, i ds = -0.6a i dss zero gate voltage drain current ? ? -10 v ds = -80v, v gs = 0v ? ? -25 v ds = -80v, v gs = 0v, t j =125c i gss gate-to-source leakage forward ? ? -100 v gs = - 20v i gss gate-to-source leakage reverse ? ? 100 v gs = 20v q g total gate charge ? ? 13.4 v gs = -12v, i d = -0.96a, q gs gate-to-source charge ? ? 3.7 nc v ds = -50v q gd gate-to-drain (?miller?) charge ? ? 3.0 t d (on) turn-on delay time ? ? 21 v dd = -50v, i d = -0.96a, t r rise time ? ? 17 v gs = -12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 40 t f fall time ? ? 90 l s + l d total inductance ? 10 ? measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance ? 390 ? v gs = 0v, v ds = 25v c oss output capacitance ? 100 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 7.0 ? na nh ns a ? note: corresponding spice and saber models are available on international rectifier website.
irhg567110 pre-irradiation 4 www.irf.com table 1. electrical characteristics for each n-channel device @ tj = 25c, post total dose irradiation
parameter 100k rads(si) 1 300k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 100 ? 100 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 2.0 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20v i dss zero gate voltage drain current ? 10 ? 10 a v ds = 80v, v gs = 0v r ds(on) static drain-to-source ? 0.226 ? 0.246 ? v gs = 12v, i d = 1.0a on-state resistance (to-39) r ds(on) static drain-to-source ? 0.29 ? 0.31 ? v gs = 12v, i d = 1.0a on-state resistance (mo-036ab) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-39 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. v sd diode forward voltage ? 1.2 ? 1.2 v v gs = 0v, i s =1.6a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. radiation characteristics 1. part number irhg567110 2. part number irhg563110 fig a. typical single event effect, safe operating area for footnotes refer to the last page table 2. typical single event effect safe operating area (per die) let energy range vds (v) (mev/(m g /cm 2 )) (mev) ( m) @vgs = @vgs = @vgs = @vgs = @vgs = 0v -5v -10v -15v -20v 38 5% 300 7.5% 38 7.5% 100 100 100 100 100 61 5% 330 7.5% 31 10% 100 100 100 35 25 84 5% 350 10% 28 7.5% 100 100 80 25 - 0 20 40 60 80 100 120 -20 -15 -10 -5 0 bias vgs (v) bias vds (v) let=38 5% let=61 5% let=84 5%
www.irf.com 5 pre-irradiation irhg567110 table 1. electrical characteristics for each p-channel device @ tj = 25c, post total dose irradiation
parameter 100k rads(si) 1 300k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -100 ? -100 ? v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage -2.0 -4.0 -2.0 -4.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward ? -100 ? -100 na v gs = -20v i gss gate-to-source leakage reverse ? 100 ? 100 v gs = 20 v i dss zero gate voltage drain current ? -10 ? -10 a v ds =-80v, v gs =0v r ds(on) static drain-to-source ? 0.916 ? 0.936 ? v gs = -12v, i d =-0.6a on-state resistance (to-39) r ds(on) static drain-to-source ? 0.96 ? 0.98 ? v gs = -12v, i d =-0.6a on-state resistance (mo-036ab) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-39 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part number irhg567110 2. part number irhg563110 fig a. typical single event effect, safe operating area v sd diode forward voltage ? -3.5 ? -3.5 v v gs = 0v, i s = -0.96a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2.
let energy range vds (v) (mev/(m g /cm 2 )) (mev) ( m) @vgs = @vgs = @vgs = @vgs = @vgs = 0v 5v 10v 15v 20v 38 5% 270 7.5% 35 7.5% -100 -100 -100 -100 -100 61 5% 330 7.5% 30 7.5% -100 -100 -100 -100 -25 84 5% 350 7.5% 28 7.5% -100 -100 -100 -30 - -120 -100 -80 -60 -40 -20 0 0 5 10 15 20 bias vgs (v) bias vds (v) let=38 5% let=61 5% let=84 5% table 2. typical single event effect safe operating area (per die)
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n-channel q1,q3 0.1 1 10 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 5.0 5.5 6.0 6.5 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 1.6a
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n-channel q1,q3 1 10 100 0 200 400 600 800 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 1.6a v = 20v ds v = 50v ds v = 80v ds 0.1 1 10 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on)
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v ds 90% 10% v gs t d(on) t r t d(off) t f $
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n-channel q1,q3 v gs 25 50 75 100 125 150 0.0 0.3 0.6 1.0 1.3 1.6 t , case temperature ( c) i , drain current (a) c d 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.irf.com 9 pre-irradiation irhg567110 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - ,- !

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t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v n-channel q1,q3 v gs 25 50 75 100 125 150 0 50 100 150 200 250 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 0.7a 1.0a 1.6a
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p-channel q2,q4 0.1 1 10 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 0.1 1 10 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 1 10 5.0 5.2 5.4 5.6 5.8 v = -50v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -12v -0.96a
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p-channel q2,q4 1 10 100 0 100 200 300 400 500 600 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss 0 2 4 6 8 10 12 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -0.96a v = -20v ds v = -50v ds v = -80v ds 0.1 1 10 1.0 2.0 3.0 4.0 5.0 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 -v ds , drain-tosource voltage (v) 0.1 1 10 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on)
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1 0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f p-channel q2,q4 v gs 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 t , case temperature ( c) -i , drain current (a) c d 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
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t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v !

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q g q gs q gd v g charge ,- d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - p-channel q2,q4 v gs 25 50 75 100 125 150 0 100 200 300 400 500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -0.4a -0.6a -0.96a
irhg567110 pre-irradiation 14 www.irf.com total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a
total dose irradiation with v ds bias. 80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a v dd = - 25v, starting t j = 25c, l= 430mh, peak i l = - 0.96a, v gs = -12v i sd - 0.96a, di/dt - 290a/ s, v dd -100v, t j 150c repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 100mh, peak i l = 1.6a, v gs = 12v i sd 1.6a, di/dt 340a/ s, v dd 100v, t j 150c pulse width 300 s; duty cycle 2% case outline and dimensions ? mo-036ab footnotes: q3 q4 q2 q1 q3 q4 q2 q1 channels n ch.- q1, q3 p ch.- q2, q4 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 07/2015

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